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Ships within 48 hours · Estimated delivery Aug 10 - Aug 15
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Description
P1403EV8 P-Channel MOSFETP1403EV8 P Channel MOSFET Description: rent2 Pulsed Drain Current1 , 2 TA = 2 5 C TA = 70 C ID IDM 12 10 65 Avalanche Current IAS 39 Avalanche Energy L = 0. 1mH EAS 89 Power Dissipation TA = 25 C TA = 70 C PD 3 2 Operating Junction & Storage Tempera ture Range TJ, TSTG 55 to 150 UNITS V A mJ W C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction to Case Junction to Ambient 1 Pulse width limited by. Specification: P1403EV8 P Channel Enhancement
P1403EV8 P-Channel MOSFET
Description:
rent2 Pulsed Drain Current1 , 2 TA = 2 5 °C TA = 70 °C ID IDM -12 -10 -65 Avalanche Current IAS 39 Avalanche Energy L = 0.1mH EAS 89 Power Dissipation TA = 25 °C TA = 70 °C PD 3 2 Operating Junction & Storage Tempera ture Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 Pulse width limited by.
Specification:
P1403EV8 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 14mΩ @VGS = -10V ID - 12A SOP - 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETER S/TEST CONDITIONS SYMBOL LIMITS Drai n-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Cur
Datasheet:
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